switches - smt 10 10 - 244 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC349MS8G / 349ms8ge high isolation spdt non-reflective switch, dc - 4 ghz v02.0607 general description features functional diagram high isolation: 70 db @ 1 ghz 57 db @ 2 ghz single positive control: 0/+5v +52 dbm input ip3 non-re ective design all off state ultra small ms8g smt package: 14.8 mm 2 included in the hmc-dk005 designers kit typical applications the HMC349MS8G / HMC349MS8Ge is ideal for: ? basestation infrastructure ? mmds & 3.5 ghz wll ? catv/cmts ? test instrumentation the HMC349MS8G & HMC349MS8Ge are high isolation non-re ective dc to 4 ghz gaas mesfet spdt switches in low cost 8 lead msop8g surface mount packages with exposed ground paddles. the switch is ideal for cellular/pcs/3g basestation applications yielding 50 to 60 db isolation, low 0.8 db insertion loss and +52 dbm input ip3. power handling is excellent up through the 3.5 ghz wll band with the switch offering a p1db compression point of +31 dbm. on-chip circuitry allows a single positive voltage control of 0/+5 volts at very low dc currents. an enable input (en) set to logic high will put the switch in an all off state. electrical speci cations, t a = +25 c, vctl = 0/+5 vdc, vdd = +5 vdc, 50 ohm system parameter frequency min. typ. max. units insertion loss dc - 1.0 ghz dc - 2.0 ghz dc - 3.0 ghz dc - 4.0 ghz 0.8 0.9 1.2 1.8 1.1 1.2 1.5 2.1 db db db db isolation (rfc to rf1/rf2) dc - 1.0 ghz dc - 2.0 ghz dc - 3.0 ghz dc - 4.0 ghz 60 54 45 42 70 57 50 47 db db db db return loss (on state) dc - 1.0 ghz dc - 2.0 ghz dc - 3.0 ghz dc - 4.0 ghz 23 18 13 8 db db db db return loss (off state) 0.5 - 2.0 ghz 0.5 - 3.0 ghz 0.5 - 4.0 ghz 20 17 14 db db db input power for 1 db compression 0.25 - 4.0 ghz 27 31 dbm input third order intercept (two-tone input power = +7 dbm each tone) 0.25 - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 53 50 49 47 dbm dbm dbm dbm switching speed dc - 4.0 ghz trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) 40 120 ns ns
switches - smt 10 10 - 245 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com return loss insertion loss isolation between ports rfc and rf1 / rf2 0.1 and 1 db input compression point input third order intercept point isolation between ports rf1 and rf2 -5 -4 -3 -2 -1 0 012345 +25c +85c -40c insertion loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 rfc rf1, rf2 on rf1, rf2 off return loss (db) frequency (ghz) -80 -60 -40 -20 0 012345 rf1 rf2 all off isolation (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 012345 isolation (db) frequency (ghz) 20 22 24 26 28 30 32 34 01234 0.1 db compression point 1 db compression point input compression (dbm) frequency (ghz) 40 44 48 52 56 60 01234 +25c +85c -40c ip3 (dbm) frequency (ghz) note: rfc is re ective in all off state. HMC349MS8G / 349ms8ge high isolation spdt non-reflective switch, dc - 4 ghz v02.0607
switches - smt 10 10 - 246 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com truth table absolute maximum ratings control input signal path state vctl en rfc - rf1 rfc - rf2 low low off on high low on off low high off off high high off off rf input power (vctl = 0v/+5v) (0.25 - 4 ghz) +30 dbm (t = +85 c) supply voltage range (vdd) +7 vdc control voltage range (vctl) -1v to vdd +1v hot switch power level (vdd = +5v) +30 dbm channel temperature 150 c continuous pdiss (t = 85 c) (derate 12 mw/c above 85 c) 0.75 w thermal resistance 87 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a note: dc blocking capacitors are required at ports rfc, rf1 and rf2. their value will determine the lowest trans- mission frequency. state bias condition low 0 to +0.8 vdc @ <1 a typical high +2.0 to +5.0 vdc @ 30 a typical vdd range = +5.0 vdc 10% vdd (vdc) idd (typ.) (ma) idd (max.) (ma) +5.0 2.3 5.0 bias voltage & current ttl/cmos control voltages electrostatic sensitive device observe handling precautions HMC349MS8G / 349ms8ge high isolation spdt non-reflective switch, dc - 4 ghz v02.0607
switches - smt 10 10 - 247 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC349MS8G / 349ms8ge high isolation spdt non-reflective switch, dc - 4 ghz v02.0607 outline drawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. part number package body material lead finish msl rating package marking [3] HMC349MS8G low stress injection molded plastic sn/pb solder msl1 [1] h349 xxxx HMC349MS8Ge rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h349 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information
switches - smt 10 10 - 248 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC349MS8G / 349ms8ge high isolation spdt non-reflective switch, dc - 4 ghz v02.0607 pin descriptions pin number function description interface schematic 1vdd supply voltage. 2 vctl control input. see truth and control voltage tables. 3, 5, 8 rfc, rf1, rf2 these pins are dc coupled and matched to 50 ohms. blocking capacitors are required. 4 en enable. see truth and control voltage tables. 6, 7 gnd package bottom must also be connected to pcb rf ground.
switches - smt 10 10 - 249 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation pcb the circuit board used in the nal application should be generated with proper rf circuit design techniques. signal lines at the rf port should have 50 ohm impedance and the package ground leads and backside ground slug should be connected directly to the ground plane similar to that shown above. the evaluation circuit board shown above is available from hittite microwave corporation upon request. list of materials for evaluation pcb 107662 [1] item description j1 - j3 pcb mount sma rf connector j4 - j8 dc pin c1 - c3 100 pf capacitor, 0402 pkg. u1 HMC349MS8G / HMC349MS8Ge spdt switch pcb [2] 107660 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 HMC349MS8G / 349ms8ge high isolation spdt non-reflective switch, dc - 4 ghz v02.0607
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